Non-merged epitaxially grown mosfet devices

ABSTRACT

Semiconductor devices include multiple fins formed in trenches in an insulator layer. Each of the plurality of fins has a uniform crystal orientation and a fin cap in a source and drain region that extends vertically and laterally beyond the trench. The fin caps of the respective fins are separate from one another. A gate structure is formed over the fins that leaves the source and drain regions exposed. The insulator layer at least partially covers a sidewall of the gate structure.

BACKGROUND

Technical Field

The present invention relates to semiconductor device fabrication and,more particularly, to merged fins in the source and drain regions offin-based field effect transistors.

Description of the Related Art

When forming replacement metal gate fin field effect transistors(FinFETs), the portions of the fins in the source and drain regions areoften merged to form a single conductive terminal. A gate spacer isformed, protecting the fins in the area under the gate, and the finsoutside the gate spacer are epitaxially grown until neighboring finscome into contact with one another.

However, because the fins display both <110> and <100> crystallinesurfaces, simple epitaxial growth of the existing fins may causedefects, particularly in growth from <110> surfaces. Furthermore,uncontrolled epitaxial growth is effective at partially merging fins,but it can be difficult to control and suppress that merge in desiredlocations.

SUMMARY

A semiconductor device includes multiple fins formed in trenches in aninsulator layer. Each of the plurality of fins has a uniform crystalorientation and a fin cap in a source and drain region that extendsvertically and laterally beyond the trench. The fin caps of therespective fins are separate from one another. A gate structure isformed over the fins that leaves the source and drain regions exposed.The insulator layer at least partially covers a sidewall of the gatestructure.

A semiconductor device includes multiple fins formed in trenches in aninsulator layer. Each of the fins has a uniform crystal orientation andincludes an etched seed layer and an in situ doped, epitaxially grownfin extension in a source and drain region that extends vertically andlaterally beyond the trench. The fin extensions of the respective finsare separate from one another. A gate structure is formed over the finsthat leaves the source and drain regions exposed. The insulator layer atleast partially covers a sidewall of the gate structure.

A semiconductor device includes an insulator layer formed on asubstrate. Multiple fins are formed in trenches in the insulator layer.Each of the fins has a uniform crystal orientation and includes anetched seed layer and an in situ doped, epitaxially grown fin extensionin a source and drain region that extends vertically and laterallybeyond the trench. The fin extensions of the respective fins areseparate from one another. A gate structure is formed over the pluralityof fins between the source and drain regions. The insulator layer risesto a height on the sidewall of the gate structure that is about a sameheight as portions of the plurality of fins underneath the gatestructure.

These and other features and advantages will become apparent from thefollowing detailed description of illustrative embodiments thereof,which is to be read in connection with the accompanying drawings.

BRIEF DESCRIPTION OF DRAWINGS

The disclosure will provide details in the following description ofpreferred embodiments with reference to the following figures wherein:

FIG. 1 is a cross-sectional view of a step in forming field effecttransistors having non-merged fin extensions in accordance with thepresent principles;

FIG. 2 is a cross-sectional view of a step in forming field effecttransistors having non-merged fin extensions in accordance with thepresent principles;

FIG. 3 is a top-down view of a step in forming field effect transistorshaving non-merged fin extensions in accordance with the presentprinciples;

FIG. 4 is a cross-sectional view of a step in forming field effecttransistors having non-merged fin extensions in accordance with thepresent principles;

FIG. 5 is a cross-sectional view of a step in forming field effecttransistors having non-merged fin extensions in accordance with thepresent principles;

FIG. 6 is a cross-sectional view of a step in forming field effecttransistors having non-merged fin extensions in accordance with thepresent principles;

FIG. 7 is a cross-sectional view of a step in an alternative embodimentof forming field effect transistors having non-merged fin extensions inaccordance with the present principles;

FIG. 8 is a cross-sectional view of a step in an alternative embodimentof forming field effect transistors having non-merged fin extensions inaccordance with the present principles;

FIG. 9 is a cross-sectional view of a step in an alternative embodimentof forming field effect transistors having non-merged fin extensions inaccordance with the present principles;

FIG. 10 is a block/flow diagram of a method for forming non-merged finextensions in accordance with the present principles; and

FIG. 11 is a block/flow diagram of an alternative embodiment of a methodfor forming non-merged fin extensions in accordance with the presentprinciples.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

Embodiments of the present principles provide the merging of fins inmetal oxide semiconductors field effect transistors (MOSFETs) bysurrounding the fins with a dielectric fill and recessing the fins belowthe level of the surrounding dielectric. This leaves only the topsurface of the fins exposed such that subsequent epitaxial grown occurson only the <100> crystal surface. When the growth extends beyond thesurface of the dielectric fill, growth continues laterally as well asvertically, allowing the fins to expand without introducing the defectsthat commonly occur in <110> growth.

Merged fins are often used to decrease the spreading resistanceexperienced by charged carriers when traveling from the end of a channelto the contact. Providing a larger volume of highly doped semiconductorlowers the resistance in comparison to simple fins. Merging the fins byepitaxial growth, however, induces higher parasitic capacitance couplingfrom the gate to the material between the fins. This parasiticcapacitance can reduce the performance of the device. Embodiments of thepresent invention provide fin extensions that increase the volume of thecontacts without actually merging the fins, thereby providing thebenefits of merged fins without triggering the increase in parasiticcapacitance coupling.

It is to be understood that the present invention will be described interms of a given illustrative architecture having a wafer; however,other architectures, structures, substrate materials and processfeatures and steps may be varied within the scope of the presentinvention.

It will also be understood that when an element such as a layer, regionor substrate is referred to as being “on” or “over” another element, itcan be directly on the other element or intervening elements may also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present. It will also be understood that when an element isreferred to as being “connected” or “coupled” to another element, it canbe directly connected or coupled to the other element or interveningelements may be present. In contrast, when an element is referred to asbeing “directly connected” or “directly coupled” to another element,there are no intervening elements present.

A design for an integrated circuit chip may be created in a graphicalcomputer programming language, and stored in a computer storage medium(such as a disk, tape, physical hard drive, or virtual hard drive suchas in a storage access network). If the designer does not fabricatechips or the photolithographic masks used to fabricate chips, thedesigner may transmit the resulting design by physical means (e.g., byproviding a copy of the storage medium storing the design) orelectronically (e.g., through the Internet) to such entities, directlyor indirectly. The stored design is then converted into the appropriateformat (e.g., GDSII) for the fabrication of photolithographic masks,which typically include multiple copies of the chip design in questionthat are to be formed on a wafer. The photolithographic masks areutilized to define areas of the wafer (and/or the layers thereon) to beetched or otherwise processed.

Methods as described herein may be used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

Reference in the specification to “one embodiment” or “an embodiment” ofthe present principles, as well as other variations thereof, means thata particular feature, structure, characteristic, and so forth describedin connection with the embodiment is included in at least one embodimentof the present principles. Thus, the appearances of the phrase “in oneembodiment” or “in an embodiment”, as well any other variations,appearing in various places throughout the specification are notnecessarily all referring to the same embodiment.

It is to be appreciated that the use of any of the following “/”,“and/or”, and “at least one of”, for example, in the cases of “A/B”, “Aand/or B” and “at least one of A and B”, is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of both options (A andB). As a further example, in the cases of “A, B, and/or C” and “at leastone of A, B, and C”, such phrasing is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of the third listedoption (C) only, or the selection of the first and the second listedoptions (A and B) only, or the selection of the first and third listedoptions (A and C) only, or the selection of the second and third listedoptions (B and C) only, or the selection of all three options (A and Band C). This may be extended, as readily apparent by one of ordinaryskill in this and related arts, for as many items listed.

Referring now to the drawings in which like numerals represent the sameor similar elements and initially to FIG. 1, a cutaway view of a step informing non-merged source/drain regions is shown. In this step,semiconductor fins 106 are formed on an insulator layer 104 above a bulksubstrate layer 102. Although the present embodiments will be disclosedin the context of a semiconductor-on-insulator substrate, it should beunderstood that a bulk substrate embodiment is also contemplated. Thesubstrate layer 102 may include, for example, a semiconductor such assilicon or any other appropriate substrate material. The insulator layer104 may be formed from a buried oxide such as, e.g., silicon dioxide.The semiconductor fins 106 may be formed from silicon or from any otherappropriate semiconductor such as silicon germanium. The fins 106 mayfurthermore be doped with, e.g., phosphorus or any other appropriatedopant.

Referring now to FIG. 2, a cutaway view of a step in forming non-mergedsource/drain regions is shown. A dummy gate 204 is formed over the fins106 and may be formed from, for example, polysilicon. A spacer 206 isformed around the dummy 204 gate on all sides. The spacer 206 may beformed in parts be, for example forming a hardmask cap over the dummygate 204 and then forming hardmask sidewalls around the dummy gate 204.The spacer 206 may be formed from, e.g., silicon nitride or any otherappropriate hardmask material and may have any suitable thickness. Thespacer 206 serves to protect the dummy gate 204 and portions of theunderling fins 106 from subsequent etches and growth processes.

Referring now to FIG. 3, a top-down view of the step of FIG. 2 is shown.The fins 106 extend beyond the edges of the gate 204 and spacer 206 intosource and drain regions 302. The regions of fins 106 beneath the gate204 and spacer 206 are protected, while the source and drain regions 302remain exposed.

Referring now to FIG. 4, a cutaway view of a step in forming non-mergedsource/drain regions is shown. This view is a cutaway of a source/drainregion 302, outside of the gate 204 and spacer 206. An insulator layer402 is deposited between and around the fins 106, leaving the topsurface of the fins 106 exposed. The insulator layer 402 may be formedwith a flowable chemical vapor deposition process that deposits, forexample, silicon dioxide. The deposition may result in the insulatorlayer 402 being above the tops of fins 106. In this case, the insulatorlayer 402 may be polished in a chemical mechanical planarization stepand then etched down to the level of the fins 106.

As an alternative to chemical mechanical planarization, which mightaccidentally polish away the gate 204, an etch of the insulator 402 maybe performed instead. By controlling etch chemistry, the insulator 402may be preferentially etched compared to the fins 106.

Referring now to FIG. 5, a cutaway view of a step in forming non-mergedsource/drain regions is shown. The fins 106 in the source/drain regions302 are etched down below the level of the insulator layer 402. Thisetch may be performed using any appropriate etch, including an isotropicetch, such as a wet chemical etch, or an anisotropic etch, such as areactive ion etch. The etched fins 502 are brought down to a smallthickness. For example, the etched fins may be reduced to a thickness ofabout 5 nm.

Referring now to FIG. 6, a cutaway view of a step in forming non-mergedsource/drain regions is shown. Fin extensions 602 are epitaxially grownfrom the etched fins 502. When the growth rises above the level of theinsulator layer 402, it naturally begins to expand laterally as well asvertically, maintaining the <100> crystal configuration of the etchedfins' top surfaces. In this figure, the fins are not merged. In contrastto conventional epitaxial growth, where growth from the <110> and <100>surfaces might interfere and cause uncertainty as to when and where thefins will merge, embodiments of the present principles provide theability to predictably control the merging of the fins if desired. Itshould be recognized that, although the present embodiments provide forgrowth from the <100> surfaces of the fins 106, any suitable crystalorientation may be used instead.

As shown in the figure, the fin extensions 602 will take on a “mushroom”shape that expands outward. The uniform crystal growth providesexpansion of the fin extensions 602 at a predictable rate. This allowsfor accurate determinations to be made regarding the amount of time toperform the growth, such that the fin extensions 602 may be grown aslarge as possible without contacting one another. The same principlesmay be employed to produce fin extensions 602 having any desired size,including merging the fins if that is appropriate to a givenapplication.

When a crystal is epitaxially grown, the crystal orientation of a seedcrystal determines the crystal orientation of the grown material. Thisstep can be performed using any appropriate form of crystal epitaxyincluding the use of gaseous and/or liquid precursors. It should benoted that the fin extensions 602 may be formed from the samesemiconductor material as fins 106 or may be formed from anothersemiconductor having a compatible crystalline structure. Furthermore,the fin extensions 602 may be in situ doped with, e.g., boron orphosphorus. For example, if a gaseous epitaxy process is used, dopantsmay be added to the source gas in a concentration appropriate to thedesired dopant concentration in the fin extensions 602.

Referring now to FIG. 7, a cutaway view of a step in forming analternative embodiment of non-merged source/drain regions is shown.Rather than forming fins 706 on top of insulator layer 704, trenches areformed in the insulator layer 704 and the fins are formed directly onthe substrate 702. The trenches in insulator layer 704 may be formed byany appropriate etch process.

A gate 204 and spacer 206 may be formed over the fins 706 in the mannerdescribed above with respect to FIGS. 2 and 3. The spacer 206 leavespart of the fins 706 on either side uncovered, creating source and drainregions 302 as shown above.

Referring now to FIG. 8, a cutaway view of a step in forming analternative embodiment of non-merged source/drain regions is shown. Thefins 802 are etched down below the level of the insulator layer 704.This etch may be performed using any appropriate etch, including anisotropic etch, such as a wet chemical etch, or an anisotropic etch,such as a reactive ion etch. The etched fins 802 are brought down to asmall thickness. For example, the etched fins may be reduced to athickness of about 5 nm.

Referring now to FIG. 9, a cutaway view of a step in forming analternative embodiment of non-merged source/drain regions is shown. Finextensions 902 are epitaxially grown from the etched fins 802. When thegrowth rises above the level of the insulator layer 704, it naturallybegins to expand laterally as well as vertically, maintaining the <100>crystal configuration of the etched fins' top surfaces. In this figure,the fins are not merged. In contrast to conventional epitaxial growth,where growth from the <110> and <100> surfaces might interfere and causeuncertainty as to when and where the fins will merge, embodiments of thepresent principles provide the ability to predictably control themerging of the fins. It should be noted that the fin extensions 902 maybe formed from the same semiconductor material as fins 706 or may beformed from another semiconductor having a compatible crystallinestructure. Furthermore, the fin extensions 902 may be in situ dopedwith, e.g., boron or phosphorus.

Referring now to FIG. 10, a method for forming non-merged source/drainregions is shown. Block 1002 forms fins 106 on a substrate. In thepresent embodiments the substrate is shown as having an insulator layer104 on a bulk semiconductor layer 102, but the present principles mayalso be embodied on a bulk semiconductor substrate. Block 1004 forms adummy gate 204 over the fins 106 including a spacer 206. The dummy gate204 and spacer 206 cover only a middle portion of the fins 106, leavingthe source and drain regions 302 exposed.

Block 1006 deposits an insulator layer 402 around the fins 106 using,for example, a flowable chemical vapor deposition process. Block 1006may also include a chemical mechanical planarization process to exposethe top of the fins 106. Block 1108 performs an etch of the fin 106 downbelow the surface level of the insulator layer 402. This etch may beperformed using any appropriate etch, including an isotropic etch, suchas a wet chemical etch, or an anisotropic etch, such as a reactive ionetch. The etched fins 502 are brought down to a small thickness. Forexample, the etched fins 502 may be reduced to a thickness of about 5nm. Block 1010 then forms fin extensions 602 by epitaxially growing fromthe top surfaces of the etched fins 502.

Referring now to FIG. 11, a method for forming non-merged source/drainregions is shown. Block 1102 forms trenches in an insulator layer 104using any appropriate etching process. Block 1104 forms fins 706 in thetrenches. In the present embodiments the substrate is shown as having aninsulator layer 704 on a bulk semiconductor layer 702. Block 1106 formsa dummy gate 204 over the fins 706 including a spacer 206. The dummygate 204 and spacer 206 cover only a middle portion of the fins 706,leaving the source and drain regions 302 exposed.

Block 1108 performs an etch of the fin 106 down below the surface levelof the insulator layer 704. This etch may be performed using anyappropriate etch, including an isotropic etch, such as a wet chemicaletch, or an anisotropic etch, such as a reactive ion etch. The etchedfins 802 are brought down to a small thickness. For example, the etchedfins 802 may be reduced to a thickness of about 5 nm. Block 1110 thenforms fin extensions 902 by epitaxially growing from the top surfaces ofthe etched fins 802.

Having described preferred embodiments of non-merged epitaxially grownMOSFET devices and methods of forming the same (which are intended to beillustrative and not limiting), it is noted that modifications andvariations can be made by persons skilled in the art in light of theabove teachings. It is therefore to be understood that changes may bemade in the particular embodiments disclosed which are within the scopeof the invention as outlined by the appended claims. Having thusdescribed aspects of the invention, with the details and particularityrequired by the patent laws, what is claimed and desired protected byLetters Patent is set forth in the appended claims.

What is claimed is:
 1. A semiconductor device, comprising: a pluralityof fins formed in trenches in an insulator layer, each of the pluralityof fins having a uniform crystal orientation and a fin cap in a sourceand drain region that extends vertically and laterally beyond thetrench, wherein the fin caps of the respective fins are separate fromone another; and a gate structure formed over the fins that leaves thesource and drain regions exposed, wherein the insulator layer at leastpartially covers a sidewall of the gate structure.
 2. The semiconductordevice of claim 1, wherein the fin caps have a uniform crystalorientation of <100>.
 3. The semiconductor device of claim 1, whereinthe trenches fully penetrate the insulator layer, such that theplurality of fins rest on a semiconductor layer.
 4. The semiconductordevice of claim 1, wherein the fins comprise an etched seed layer and anepitaxially grown fin extension.
 5. The semiconductor device of claim 1,wherein the insulator layer rises to a height on the sidewall of thegate structure that is about a same height as portions of the finsunderneath the gate structure.
 6. The semiconductor device of claim 1,further comprising a spacer layer formed over the gate structure.
 7. Thesemiconductor device of claim 1, wherein the fin caps are doped.
 8. Asemiconductor device, comprising: a plurality of fins formed in trenchesin an insulator layer, each of the plurality of fins having a uniformcrystal orientation and comprising an etched seed layer and an in situdoped, epitaxially grown fin extension in a source and drain region thatextends vertically and laterally beyond the trench, wherein the finextensions of the respective fins are separate from one another; and agate structure formed over the fins that leaves the source and drainregions exposed, wherein the insulator layer at least partially covers asidewall of the gate structure.
 9. The semiconductor device of claim 8,wherein the fin extensions have a uniform crystal orientation of <100>.10. The semiconductor device of claim 8, wherein the trenches fullypenetrate the insulator layer, such that the plurality of fins rest on asemiconductor layer.
 11. The semiconductor device of claim 8, whereinthe insulator layer rises to a height on the sidewall of the gatestructure that is about a same height as portions of the plurality offins underneath the gate structure.
 12. The semiconductor device ofclaim 8, further comprising a spacer layer formed over the gatestructure.
 13. A semiconductor device, comprising: an insulator layerformed on a substrate; a plurality of fins formed in trenches in theinsulator layer, each of the plurality of fins having a uniform crystalorientation and comprising an etched seed layer and an in situ doped,epitaxially grown fin extension in a source and drain region thatextends vertically and laterally beyond the trench, wherein the finextensions of the respective fins are separate from one another; and agate structure formed over the plurality of fins between the source anddrain regions, wherein the insulator layer rises to a height on thesidewall of the gate structure that is about a same height as portionsof the plurality of fins underneath the gate structure.
 14. Thesemiconductor device of claim 13, wherein the fin extensions have auniform crystal orientation of <100>.
 15. The semiconductor device ofclaim 13, wherein the trenches fully penetrate the insulator layer, suchthat the plurality of fins rest on a semiconductor layer.
 16. Thesemiconductor device of claim 13, further comprising a spacer layerformed over the gate structure.